EMILIO SEGRE VISUAL ARCHIVES / AMERICAN INSTITUTE OF PHYSICS / SCIENCE PHOTO LIBRARY EMILIO SEGRE VISUAL ARCHIVES / AMERICAN INSTITUTE OF PHYSICS / SCIENCE PHOTO LIBRARY
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Leo Esaki (born 1925), Japanese-US physicist, adjusting equipment used in his discovery of a new physical effect in bismuth. Esaki received his PhD in 1959 from the University of Tokyo, Japan. He moved to the USA in 1960 to work at the IBM Thomas J. Watson Research Center, Yorktown, New York State. It was, however, work he had carried out in 1958 on electron tunneling that led to him sharing the 1973 Nobel Prize in Physics. The Esaki diode, which he invented, is based on this work, and Esaki's other work on semiconductors and quantum wells has led to other applications in solid-state electronics. Esaki received the Order of Culture from the Japanese Government in 1974. Photographed at the IBM Thomas J. Watson Research Center.
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