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False col SEM of memory cells in silicon chip

False col SEM of memory cells in silicon chip

T370/0461

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Credit

DR JEREMY BURGESS / SCIENCE PHOTO LIBRARY DR JEREMY BURGESS / SCIENCE PHOTO LIBRARY

Caption

False-colour scanning electron micrograph (SEM) of the memory cells forming part of a TM 2716 silicon chip, or integrated circuit. The chip is of the EPROM type: Electrically Programmable Read-Only Memory. EPROM chips are programmed by applying a voltage across selected connecting pins. In this micrograph, the memory cells are the "p"-shaped features. They provide 16,386 bits of memory & can be switched electrically so that the chip stores the information programmed into it. In some EPROMs the memory can be erased by shining ultraviolet light through a quartz window in the chip's outer packaging; it can then be reprogrammed. Magnific- ation: x330 at 35mm size. Gold tint. Original is bw print T370/454. Ref: MICROCOSMOS, fig.

Release details

Model release not required. Property release not required.

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